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| TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6800 2N6800U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Drain - Source Voltage Gate - Source Voltage Continuous Drain Current TC = +25C Continuous Drain Current TC = +100C Max. Power Dissipation Drain to Source On State Resistance Operating & Storage Temperature Note: (1) Derated Linearly by 0.2 W/C for TC > +25C (2) VGS = 10Vdc, ID = 2.0A Symbol VDS VGS ID1 ID2 Ptl Rds(on) Top, Tstg Value 400 20 3.0 2.0 25 (1) Unit Vdc Vdc Adc Adc W C 1.0 (2) -55 to +150 TO-205AF (formerly TO-39) ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS VGS, ID = 0.25mA VDS VGS, ID = 0.25mA, Tj = +125C VDS VGS, ID = 0.25mA, Tj = -55C Gate Current VGS = 20V, VDS = 0V VGS = 20V, VDS = 0V, Tj = +125C Drain Current VGS = 0V, VDS = 320V VGS = 0V, VDS = 320V, Tj = +125C Static Drain-Source On-State Resistance VGS = 10V, ID = 2.0A pulsed VGS = 10V, ID = 3.0A pulsed Tj = +125C VGS = 10V, ID = 2.0A pulsed Diode Forward Voltage VGS = 0V, ID = 3.0A pulsed V(BR)DSS VGS(th)1 VGS(th)2 VGS(th)3 IGSS1 IGSS2 IDSS1 IDSS2 rDS(on)1 rDS(on)2 rDS(on)3 VSD 400 2.0 1.0 4.0 5.0 100 200 25 0.25 1.0 1.10 2.40 1.4 nAdc Vdc Vdc Symbol Min. Max. Unit U - 18 LCC Adc mAdc Vdc T4-LDS-0148 Rev. 1 (092062) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time ID = 3.0A, VGS = 10Vdc, Gate drive impedance = 7.5, VDD = 176Vdc di/dt 100A/s, VDD 50V, IF = 3.0A Symbol td(on) tr td(off) tf trr Min. Max. 30 35 55 35 700 Unit Symbol Qg(on) Qgs Qgd Min. Max. 34.75 5.75 16.59 Unit nC VGS = 10V, ID = 3.0A VDS = 200V ns ns T4-LDS-0148 Rev. 1 (092062) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 PACKAGE DIMENSIONS Ltr CD CH HD h J k LD LL LS LU L1 L2 P Q r Dimensions Inches Millimeters Min Max Min Max .305 .160 .335 .355 .180 .370 7.75 4.07 8.51 9.02 4.57 9.39 2 3 7, 8 7, 8 6 7, 8 7, 8 7, 8 5 1.27 0.25 45 TP 4 9 6 Notes .009 .041 .028 .034 .029 .045 .016 .021 .500 .750 .200 TP .016 .019 .050 .250 .070 .050 .010 45 TP 0.23 1.04 0.72 0.86 0.74 1.14 0.41 0.53 12.7 19.05 5.08 TP 0.41 0.48 1.27 6.35 1.78 NOTES: Dimensions are in inches. Millimeters are given for general information only. Beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm). Dimension k measured from maximum HD. Outline in this zone is not controlled. Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 6 LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 7 All three leads. 8 Radius (r) applies to both inside corners of tab. 9 Drain is electrically connected to the case. 10 In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Physical dimensions for TO-205AF. 1 2 3 4 5 T4-LDS-0148 Rev. 1 (092062) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 NOTES: 1 Dimensions are in inches. 2 Millimeters are given for general information only. 3 In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 4 Ceramic package only. Ltr BL BW CH LL1 LL2 LS LS1 LS2 LW Q1 Q2 Q3 TL TW Dimensions Inches Millimeters Min Max Min Max .345 .360 8.77 .280 .295 7.11 .095 .115 2.41 .040 .055 1.02 .055 .065 1.40 .050 BSC 1.27 BSC .025 BSC 0.635 BSC .008 BSC 0.203 BSC .020 .030 0.51 0.76 .105 REF 2.67 REF .120 REF 3.05 REF .045 .055 1.14 1.40 .070 .080 1.78 2.03 .120 .130 3.05 3.30 T4-LDS-0148 Rev. 1 (092062) Page 4 of 4 |
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